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PDF BFU725F-N1 Data sheet ( Hoja de datos )
| Número de pieza | BFU725F-N1 | |
| Descripción | NPN wideband silicon germanium RF transistor | |
| Fabricantes | NXP Semiconductors | |
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BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz fT silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO
VCEO
VEBO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
Tsp 90 C
IC = 10 mA; VCE = 2 V;
Tj = 25 C
Min Typ
--
--
--
- 25
[1] -
-
160 280
Max
10
2.8
1.0
40
136
400
Unit
V
V
V
mA
mW
1 page  
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Table 7. Characteristics …continued
Tj = 25 C unless otherwise specified.
Symbol Parameter
PL(1dB) output power at 1 dB gain
compression
IP3 third-order intercept point
Conditions
IC = 25 mA; VCE = 2 V; ZS = ZL = 50 ; Tamb = 25 C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IC = 25 mA; VCE = 2 V; ZS = ZL = 50 ; Tamb = 25 C;
f2 = f1 + 1 MHz
f1 = 1.5 GHz
f1 = 1.8 GHz
f1 = 2.4 GHz
f1 = 5.8 GHz
[1] Gp(max) is the maximum power gain, if K 1. If K 1 then Gp(max) = MSG.
Min Typ Max Unit
- 8.5 -
-9-
- 8.5 -
-8-
dBm
dBm
dBm
dBm
- 17 -
- 17 -
- 17 -
- 19 -
dBm
dBm
dBm
dBm
30
IC
(mA)
20
10
001aak271
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE (V)
Tamb = 25 C.
(1) IB = 110 A
(2) IB = 100 A
(3) IB = 90 A
(4) IB = 80 A
(5) IB = 70 A
(6) IB = 60 A
(7) IB = 50 A
(8) IB = 40 A
(9) IB = 30 A
(10) IB = 20 A
(11) IB = 10 A
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
400
hFE
350
300
250
200
0
(1)
(2)
(3)
10
Tamb = 25 C.
(1) VCE = 1 V
(2) VCE = 1.5 V
(3) VCE = 2 V
001aak272
20 30
IC (mA)
Fig 3. DC current gain a function of collector current;
typical values
BFU725F_N1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU725F_N1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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