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PDF 2N6211 Data sheet ( Hoja de datos )
| Número de pieza | 2N6211 | |
| Descripción | Silicon PNP Power Transistors | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -225V(Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for high-speed switching and linear amplifier
application for high-voltage operational amplifier, switching
regulators, converters, inverters,deflection stages and high
fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-275
VCEO
Collector-Emitter Voltage
-225
VEBO
Emitter-Base Voltage
-6
IC Collector Current-Continuous
-2
ICM Collector Current-Peak
-5
IB Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-1
35
150
Tstg Storage Temperature Range -65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 ℃/W
isc Product Specification
2N6211
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6211.PDF ] | |
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