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PDF 2N5685 Data sheet ( Hoja de datos )

Número de pieza 2N5685
Descripción NPN POWER SILICON TRANSISTOR
Fabricantes Microsemi 
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No Preview Available ! 2N5685 Hoja de datos, Descripción, Manual

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
DEVICES
2N5685
2N5686
LEVELS
JAN
JANTX
JANTV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +25°C (1)
@ TC = +100°C (1)
Operating & Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
2N5685 2N5686
60 80
60 80
5.0 5.0
15 15
50 50
300 300
171 171
-55 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Max.
.0584
Note:
1. Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Unit
°C/W
Parameters / Test Conditions
OFF CHARACTERTICS (1)
Collector-Emitter Breakdown Voltage
IC = 100mAdc
Collector-Emitter Cutoff Current
VCE = 30Vdc
VCE = 40Vdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 1.5Vdc
VCE = 80Vdc, VBE = 1.5Vdc
Collector-Base Cutoff Current
VCE = 60Vdc
VCE = 80Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
Symbol Min. Max. Unit
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
V(BR)CEO
ICEO
ICEX
ICBO
IEBO
60 Vdc
80
500 μAdc
500
10
10
μAdc
2.0
2.0
mAdc
1.0 mAdc
TO-3 (TO-204AE)
T4-LDS-0162 Rev. 1 (100546)
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