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PDF D1047 Datasheet ( Hoja de datos )

Número de pieza D1047
Descripción High power NPN epitaxial planar bipolar transistor
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo

Total 10 Páginas
		
D1047 Hoja de datos, Descripción, Manual
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC
Application
Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10

1 page

D1047 pdf
2SD1047
2.2 Test circuit
Figure 8. Resistive load switching test circuit
Electrical characteristics
1) Fast electronic switch
2) Non-inductive resistor
Doc ID 018729 Rev 1
5/10

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