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PDF 2N7002KU Data sheet ( Hoja de datos )

Número de pieza 2N7002KU
Descripción N-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



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No Preview Available ! 2N7002KU Hoja de datos, Descripción, Manual

Main Product Characteristics
VDSS
60V
RDS(on) 3Ω(max.)
ID 0.3A
Features and Benefits
SOT-23
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
ESD Rating2000V HBM
150operating temperature
Lead free product
2N7002KU
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
0.3
1.2
0.63
60
± 20
-55 to +150
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
200
Units
A
W
V
V
°C
Units
/W
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Page 1 of 6
Rev.1.0

1 page




2N7002KU pdf
Mechanical Data
SOT-23 PACKAGE OUTLINE DIMENSION
2N7002KU
60V N-Channel MOSFET
Symb ol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimension In M illimeters
Min Max
0.900
1.150
0.000
0.900
0.100
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
00 80
Dimension In Inches
Min Max
0 .0 35
0.045
0 .0 00
0 .0 35
0.004
0.041
0 .0 12
0.020
0 .0 03
0.006
0 .1 10
0.118
0 .0 47
0.055
0 .0 89
0.100
0.03 7T YP
0 .0 71
0.079
0 .02 2R EF
0 .0 12
0.020
00 80
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Rev.1.0

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