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Datasheet FP5ZC180 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FP5ZC180Surface Mount Zener Diodes

FP5ZC8V2 thru FP5ZC200 Surface Mount Zener Diodes Vz Range:8.2 to 200V Power Dissipation:0.5W Features • Toal power dissipation:max,500mW • Low leakage current • Moisture sensitivity: level 1, per J-STD-020 • Solder dip 260 °C, 10 s • Low profile, typical thickness 1.0mm • For use in
GOOD-ARK
GOOD-ARK
diode


FP5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FP5001PWM CONTROL IC

Technology GENERAL DESCRIPTION FP5001 PWM CONTROL IC WITH SCP/DTC FUNCTION The FP5001, a 1-chi p co mposed of o pen collector tran sistor o utput pulse-wi dth-modulation control circuits with an error amplifier and dead-time comparators (DTC), the FP5001 contains a 1.0V precision voltage reference
Feeling Technology
Feeling Technology
data
2FP5001PWM Controller

FP5001 PWM Controller With SCP / DTC Function General Description The FP5001 is a single chip pulse -width-modulation controlle r co mposed of an open colle ctor transistor output, an error amplifier and duty control comparators (DTC). The FP5001 contains a 1.0V precision voltage referen ce regulat
Feeling Technology
Feeling Technology
controller
3FP5003High Frequency PWM Controller

FP5003 High Frequency PWM Controller With Short Circuit Restart General Description The FP5003, a high performance monolithic IC, includes adjustable frequency oscillator, error amplifier for pulse width modulation (PWM) control, 1.0V precision voltage reference, under-voltage lockout circuit (UVLO
Feeling Technology
Feeling Technology
controller
4FP502DC-DC Converter Applications

Ordering number:EN5263 FP502 N-Channel Silicon MOSFET Silicon Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. Package D
Sanyo Semicon Device
Sanyo Semicon Device
converter
5FP50FRECTIFIER STACKS 2.2 A FORWARD CURRENT 3000 NS RECOVERY TIME

New Jersey Semiconductor
New Jersey Semiconductor
rectifier
6FP50N06L50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approac
Intersil Corporation
Intersil Corporation
mosfet
7FP50R12KS4CIGBT-Module

Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KS4C Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durc
eupec
eupec
igbt



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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