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Número de pieza | PE4152 | |
Descripción | Quad MOSFET Mixer | |
Fabricantes | Peregrine Semiconductor | |
Logotipo | ||
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No Preview Available ! PE4152
Document Category: Product Specification
UltraCMOS® Quad MOSFET Mixer
Features
• Quad MOSFET array with integrated LO enable
and bypass mode
• Ultra high linearity in both LO modes
▪ LO enable: 25 dBm IIP3, 52 dBm IIP2
▪ LO bypass: 24 dBm IIP3, 46 dBm IIP2
• High isolation in both LO modes
▪ LO enable: 30/30 dB LO–RF/IF
▪ LO bypass: 60/58 dB LO–RF/IF
• Low conversion loss in both LO modes
• Packaging – 20-lead 4 × 4 × 0.85 mm QFN
Applications
• Land-mobile-radio (LMR)
▪ Portable radio
▪ Mobile radio
• Cellular infrastructure
• Set-top box (STB)/CATV systems
Figure 1 • PE4152 Functional Diagram
VDD RF
LO
GND EN
MixBias
(optional)
IF
Product Description
The PE4152 is a high linearity quad metal-oxide-semiconductor field-effect transistor (MOSFET) mixer with an
integrated local oscillator (LO) amplifier. The LO amplifier allows for LO input drive levels of less than 0 dBm to
produce third-order intercept point (IIP3) values similar to a quad MOSFET array driven with a 15 dBm LO drive.
The PE4152 operates with differential signals at the radio frequency (RF) and intermediate frequency (IF) ports
and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downcon-
verter.
The PE4152 also offers an integrated LO amplifier bypass option providing additional flexibility for low power or
increased linearity operation. The bypassed LO amplifier allows superior LO to RF and LO to IF isolation levels
relative to the enabled mode.
The PE4152 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of
conventional CMOS.
©2015–2016, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-64061-4 – (04/2016)
1 page PE4152
Quad MOSFET Mixer
Typical Performance Data
Figure 2–Figure 23 show the typical performance data @ +25 °C, VDD = 3.0V, unless otherwise specified.
Figure 2 • Conversion Loss vs LO Power (LO Enable)
LO Power = -10 dBm
LO Power = -6 dBm
10
9
8
7
6
5
4
3
2
1
0
100 200 300 400 500 600 700 800 900 1000
RF Frequency [MHz]
Figure 3 • Conversion Loss vs VDD (LO Enable)
VDD = 2.9V
VDD = 3V
VDD = 3.1V
10
9
8
7
6
5
4
3
2
1
0
100 200 300 400 500 600 700 800 900 1000
RF Frequency [MHz]
DOC-64061-4 – (04/2016)
www.psemi.com
Page 5
5 Page PE4152
Quad MOSFET Mixer
Figure 14 • LO–IF Isolation vs LO Power (LO Enable)
LO Power = -10 dBm
LO Power = -6 dBm
45
40
35
30
25
20
15
10
5
0
100 200 300 400 500 600 700 800 900 1000
RF Frequency [MHz]
Figure 15 • LO–IF Isolation vs Temperature (LO Enable)
-40 °C
+25 °C
+85 °C
45
40
35
30
25
20
15
10
5
0
100 200 300 400 500 600 700 800 900 1000
RF Frequency [MHz]
DOC-64061-4 – (04/2016)
www.psemi.com
Page 11
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet PE4152.PDF ] |
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