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PDF EKI04047 Data sheet ( Hoja de datos )
| Número de pieza | EKI04047 | |
| Descripción | N Channel Trench Power MOSFET | |
| Fabricantes | SANKEN | |
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40 V, 80 A, 4.1 mΩ Low RDS(ON)
N ch Trench Power MOSFET
EKI04047
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 80 A
RDS(ON) ----------5.2 mΩ max. (VGS = 10 V, ID = 42.8 A)
Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-220
(4)
D
(1) (2) (3)
GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 20 V, L = 1 mH,
IAS = 9.4 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
40
± 20
80
161
80
161
89
16.7
90
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
EKI04047-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
1 page  
EKI04047
100
80
60
40
20
0
0
PD-Ta Derating
50 100
Ta (℃)
150
SAFE OPERATING AREA
1000
ID(pulse) MAX
100
PT=100μs
10 PT=1ms
1
1 shot
Tc=25℃
0.1
0.1 1 10
VDS (V)
100
1.E+01
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+00
1.E-01
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
P.T. (sec)
1.E+00
Tc = 25℃
1shot
VDS < 10V
1.E+01
1.E+02
EKI04047-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet EKI04047.PDF ] | |
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