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PDF MBRD10100CT Data sheet ( Hoja de datos )

Número de pieza MBRD10100CT
Descripción Schottky Barrier Rectifier ( Diode )
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Features
Plastic package has underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center tap
Metal of silicon rectifier, majority carrier conduction
Low forward voltage, high efficiency
Guarding for over voltage protection
MBRD10100CT
Schottky Barrier Rectifier
Reverse Voltage 100 Volts Forward Current 10 Amperes
Package: TO-252(D-PAK)
Mechanical Data
Case: Epoxy, Molded
Weight: 0.4gramsapproximately
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 sec
Shipped 2500 units per reel
Maximum Ratings & Electrical Characteristics
(TA=25unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
Maximum DC blocking voltage
VDC
Maximum average forward rectified current at
IF(AV)
Tc=105°C total device per diode
Peak forward surge current 8.3ms single half sine-wave superimposed
IFSM
on rated load per diode
Peak repetitive reverse current per leg at tp=2.0us ,1KHz
IRRM
Voltage rate of changerated VR
DV/dt
Operating junction temperature range
TJ
Storage temperature range
TSTG
Maximum instantaneous forward voltage per leg
IF=5A
IF=5A
TC=25
TC=125
VF
Maximum reverse current per leg at working peak
Reverse voltage
TJ=25
TJ=100°C
IR
Thermal Characteristics TA=25unless otherwise noted
Symbol Parameter
TYPTO-252
RθJC
Thermal Resistance, Junction to Case per Leg
3.5
RθJA
Thermal Resistance, Junction to Ambient per Leg
62.5
NotePulse test:300us pulse width, duty cycle=2%
MBRD10100CT
100
100
100
10
5
120
1.0
10000
55 to+150
55 to+150
0.85
0.75
50
5
Unit
°C /W
°C /W
UNIT
V
V
V
A
A
A
V/us
°C
°C
V
uA
mA
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                                            2013.12REV.A   

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