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PDF MBRD10200CT Data sheet ( Hoja de datos )

Número de pieza MBRD10200CT
Descripción Schottky Barrier Rectifier ( Diode )
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MBRD10200CT
Schottky Barrier Rectifier
Reverse Voltage 200 Volts Forward Current 10 Amperes
Features
Plastic package has underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center tap
Metal of silicon rectifier, majority carrier conduction
Low forward voltage, high efficiency
Guarding for over voltage protection
Package: TO-252
Mechanical Data
Case: Epoxy, Molded
Weight: 0.4grams(approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 sec
Shipped 2500 units per reel
Maximum Ratings & Electrical Characteristics
(TA=25unless otherwise noted)
PARAMETER
TEST
SYMBOL MBRD10200CT
CONDITIONS
Maximum repetitive peak reverse voltage
VRRM
200
Working peak reverse voltage
VRWM
200
Maximum DC blocking voltage
VDC 200
Maximum average forward rectified current at
IF(AV)
10
Tc=105°C total device per diode
5
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Peak repetitive reverse current per leg at tp=2.0us ,1KHz
IRRM
1.0
Voltage rate of change(rated VR)
DV/dt
10000
Operating junction temperature range
TJ 55 to+150
Storage temperature range
TSTG
55 to+150
Maximum instantaneous forward voltage per leg
IF=5A
IF=5A
TC=25
TC=125
VF
0.95
0.88
Maximum reverse current per leg at working peak
Reverse voltage
TJ=25
TJ=100°C
IR
Thermal Characteristics TA=25unless otherwise noted
Symbol Parameter
TYP. (TO-252)
200
15
RθJC
Thermal Resistance, Junction to Case per Leg
3.5
RθJA Thermal Resistance, Junction to Ambient per Leg
62.5
Note: Pulse test:300us pulse width, duty cycle=2%
UNIT
V
V
V
A
A
A
V/us
°C
°C
V
uA
mA
Unit
°C /W
°C /W
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                                            2013.12REV.A   

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