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PDF MBR10150C Data sheet ( Hoja de datos )

Número de pieza MBR10150C
Descripción HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10150C
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR10150C is available in standard TO-220F-3,
TO-220-3 and TO-220-3 (2) packages.
Features
High Surge Capacity
• 150°C Operating Junction Temperature
• 10A Total (5A Per Diode Leg)
• Guard-ring for Stress Protection
• Pb-free Packages are Available
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
2×5A
150V
150°C
0.85V
Mechanical Characteristics
Case: Epoxy, Molded
• Epoxy Meets UL 94V-0 @ 0.125in.
• Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3
Mar. 2011 Rev. 1. 3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR10150C
BCD Semiconductor Manufacturing Limited
1

1 page




MBR10150C pdf
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR10150C
100
10
T =150oC
J
1
o
T =125 C
J
0.1
o
T =25 C
J
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
10000
1000
T =150oC
J
100
T =125oC
J
10
1
0.1
0.01
0
T =25oC
J
20 40 60 80 100 120 140 160
Reverse Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
Figure 5. Typical Reverse Current Per Diode
10
9
8
7
6
5
4
3
2
1
0
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (oC)
Figure6. Average Forward Current vs.
Case Temperature (Square, Per Diode)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5

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