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PDF KAE-08151 Data sheet ( Hoja de datos )

Número de pieza KAE-08151
Descripción EMCCD Image Sensor
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KAE-08151
Advance Information
2856 (H) x 2856 (V) Interline
Transfer EMCCD Image Sensor
The KAE−08151 Image Sensor is a 8.1 Mp, 4/3format, Interline
Transfer EMCCD image sensor that provides exceptional imaging
performance in extreme low light applications. Each of the sensor’s
four outputs incorporates both a conventional horizontal CCD register
and a high gain EMCCD register.
An intra-scene switchable gain feature samples each charge packet
on a pixel-by-pixel basis. This enables the camera system to determine
whether the charge will be routed through the normal gain output or
the EMCCD output based on a user selectable threshold. This feature
enables imaging in extreme low light, even when bright objects are
within a dark scene, allowing a single camera to capture quality
images from sunlight to starlight.
This image sensor is based on an advanced 5.5-micron Interline
Transfer CCD Platform, and features extended dynamic range,
excellent imaging performance, and a flexible readout architecture
that enables use of 1, 2, or 4 outputs. A vertical overflow drain
structure suppresses image blooming, provides excellent MTF, and
enables electronic shuttering for precise exposure.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Interline CDD; with EMCCD
Total Number of Pixels
2880 (H) × 2880 (V)
Number of Effective Pixels
2928 (H) × 2904 (V)
Number of Active Pixels
2856 (H) × 2856 (V)
Pixel Size
5.5 mm(H) × 5.5 mm (V)
Active Image Size
15.71 mm (H) × 15.71 mm (V)
22.22 mm (Diagonal)
4/3Optical Format
Aspect Ratio
1:1
Number of Outputs
Charge Capacity
Output Sensitivity
1, 2, or 4
20,000 e
44 mV/e
Quantum Sensitivity
Mono/Color (RGB)
50% / 33%, 41%, 43%
Readout Noise (20 MHz)
Normal Mode (1× Gain)
Intra-Scene Mode (20× Gain)
9 erms
< 1 erms
Dark Current (0°C)
Photodiode, VCCD
< 0.1, 6 e/s
Dynamic Range
Normal Mode (1× Gain)
Intra-Scene Mode (20× Gain)
66 dB
86 dB
Charge Transfer Efficiency
0.999999
Blooming Suppression
> 1000 X
Smear
Image Lag
−100 dB
< 1 e
Maximum Pixel Clock Speed
40 MHz
Maximum Frame Rate
Normal Mode, Intra-Scene Mode
14 fps (40 MHz), 8 fps (20 MHz)
Package Type
155 Pin PGA
Cover Glass
Clear Glass, Taped
NOTE: All Parameters are specified at T = −10°C unless otherwise noted.
www.onsemi.com
Figure 1. KAE−08151 Interline
Transfer EMCCD Image Sensor
Features
Intra-Scene Switchable Gain
Wide Dynamic Range
Low Noise Architecture
Exceptional Low Light Imaging
Global Shutter
Excellent Image Uniformity and MTF
Bayer Color Pattern and Monochrome
Applications
Surveillance
Scientific Imaging
Medical Imaging
Intelligent Transportation
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
This document contains information on a new
product. Specifications and information herein
are subject to change without notice.
This document, and the information contained herein,
is CONFIDENTIAL AND PROPRIETARY and the
property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used,
published, disclosed or disseminated outside of the
Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse
engineering of any or all of the information contained
herein is strictly prohibited.
E 2016, SCILLC. All Rights Reserved.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. P2
1
Publication Order Number:
KAE−08151/D

1 page




KAE-08151 pdf
Table 3. PIN DESCRIPTION (continued)
Pin No.
Label
B11 H1Sa
B12 H2Sa
C11 H1Ba
C12 H2Ba
C13 SUB
C15 H1Bb
C14 H2Bb
B14 H2Sb
B15 H1Sb
B8 GND
A14 H2b
A15 H1b
B16 H1BEMb
B17 H2BEMb
C16 H1SEMb
C17 H2SEMb
A17 VDD3b
A16 VOUT3b
B13 GND
B19 RG23b
A18 H2Lb
C19 H2SW3b
C18 H2SW2b
B18 GND
A19 VOUT2b
A20 VDD2b
C20 H2Xb
B20 RG1b
B21 VSS1b
A21 VOUT1b
A22 VDD1b
B22 GND
B23 V4B
C23 V3B
C22 V2B
C21 V1B
D24 VSUBREF
A23 VDD15bd
B24 ESD
A24 +9 V
E24 GND
F24 V2B
F23 ESD
D21 V1T
D22 V2T
D23 V3T
E23 V4T
KAE−08151
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
Description
HCCD Storage Phase 1, Quadrant a
HCCD Storage Phase 2, Quadrant a
HCCD Barrier Phase 1, Quadrant a
HCCD Barrier Phase 2, Quadrant a
Substrate
HCCD Barrier Phase 1, Quadrant b
HCCD Barrier Phase 2, Quadrant b
HCCD Storage Phase 2, Quadrant b
HCCD Storage Phase 1, Quadrant b
Ground
HCCD Phase 2, Quadrant b
HCCD Phase 1, Quadrant b
EMCCD Barrier Phase 1, Quadrant b
EMCCD Barrier Phase 2, Quadrant b
EMCCD Storage Multiplier Phase 1, Quadrant b
EMCCD Storage Multiplier Phase 2, Quadrant b
Amplifier 3 Supply, Quadrant b
Video Output 3, Quadrant b
Ground
Amplifier 2 and 3 Reset, Quadrant b
HCCD Last Gate, Outputs 1, 2 and 3, Quadrant b
HCCD Output 3 Selector, Quadrant b
HCCD Output 2 Selector, Quadrant b
Ground
Video Output 2, Quadrant b
Amplifier 2 Supply, Quadrant b
Floating Gate Exit HCCD Gate, Quadrant b
Amplifier 1 Reset, Quadrant b
Amplifier 1 Return, Quadrant b
Amplifier 1 Output, Quadrant b
Amplifier 1 Supply, Quadrant b
Ground
VCCD Bottom Phase 4
VCCD Bottom Phase 3
VCCD Bottom Phase 2
VCCD Bottom Phase 1
Substrate Voltage Reference
+15 V Supply, Quadrants b and d
+9 V Supply
Ground
VCCD Bottom Phase 2
VCCD Top Phase 1
VCCD Top Phase 2
VCCD Top Phase 3
VCCD Top Phase 4
www.onsemi.com
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KAE-08151 arduino
KAE−08151
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
OPERATION
Absolute Maximum Ratings
Absolute maximum rating is defined as a level or
condition that should not be exceeded at any time per the
description. If the level or the condition is exceeded, the
device will be degraded and may be damaged. Operation at
these values will reduce MTTF.
Table 7. ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Minimum
Max.
Unit
Operating Temperature (Note 1)
TOP −70 +40
°C
Humidity (Note 2)
RH +5 +90 %
Output Bias Current (Note 3)
Off-chip Load
IOUT
CL
5 mA
10 pF
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Noise performance will degrade at higher temperatures.
2. T = 25°C. Excessive humidity will degrade MTTF.
3. Total for all outputs. Maximum current is −15 mA for each output. Avoid shorting output pins to ground or any low impedance source during
operation. Amplifier bandwidth increases at higher current and lower load capacitance at the expense of reduced gain (sensitivity).
Table 8. ABSOLUTE MAXIMUM VOLTAGE RATINGS BETWEEN PINS AND GROUND
Description
Minimum
Max.
VDD2(a,b,c,d), VDD3(a,b,c,d)
−0.4 17.5
VOUT2(a,b,c,d), VOUT3(a,b,c,d)
−0.4 15
VDD1(a,b,c,d), VOUT1(a,b,c,d)
−0.4 7.0
V1B, V1T
ESD – 0.4
ESD + 22.0
V2B, V2T, V3B, V3T, V4B, V4T
ESD – 0.4
ESD + 14.0
H1(a,b,c,d), H2(a,b,c,d)
H1S(a,b,c,d), H2S(a,b,c,d)
H1B(a,b,c,d), H2B(a,b,c,d)
H1BEM(a,b,c,d), H2BEM(a,b,c,d)
H2SW2(a,b,c,d), H2SW3(a,b,c,d)
H2L(a,b,c,d)
H2X(a,b,c,d)
RG1(a,b,c,d), RG23(a,b,c,d)
–0.4 +10
H1SEM(a,b,c,d), H2SEM(a,b,c,d)
−0.4 +20
ESD
−9.0 0.0
SUB (Notes 1 and 2)
6.5
1. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions.
2. The measured value for VSUBREF is a diode drop higher than the recommended minimum VSUB bias.
40
Unit
V
V
V
V
V
V
V
V
V
Power Up and Power Down Sequence
SUB and ESD power up first, then power up all other
biases in any order. No pin may have a voltage less than ESD
at any time. All HCCD pins must be greater than or equal to
GND at all times. The SUBREF pin will not become valid
until VDD15ac and VDD15bd have been powered.
Therefore the SUB voltage cannot be directly derived from
the SUBREF pin. The SUB pin should be at least 4 V before
powering up VDD2(a,b,c,d) and VDD3(a,b,c,d).
www.onsemi.com
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