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Número de pieza | EFC3C001NUZ | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! EFC3C001NUZ
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
20V, 30mΩ, 6A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-2 cells lithium-ion battery applications.
www.onsemi.com
Features
2.5V drive
Common-Drain type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
VSSS
20V
RSS(on) Max
30mΩ@ 4.5V
34mΩ@ 3.8V
39mΩ@ 3.1V
56mΩ@ 2.5V
IS Max
6A
Applications
1-2 Cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
PW100s, duty cycle1%
Total Dissipation (Note 2)
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
20
10
6
60
1.6
150
55 to +150
V
V
A
A
W
C
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 2)
RJA
78.1
Note 2 : Surface mounted on ceramic substrate(5000mm2 0.8mm).
Unit
C/W
ELECTRICAL CONNECTION
N-Channel
4
Rg
3
Rg
2
Rg=500
1 : Source1
2 : Gate1
3 : Gate2
1 4 : Source2
MARKING
WLCSP4, 1.26×1.26 /
EFCP1313-4DG-020
wc
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
EFC3C001NUZ/D
1 page EFC3C001NUZ
PT -- Ta
1.8
Surface mounted on ceramic substrate
1.6 (5000mm20.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
100
7
5
Duty Cycle=0.5
RJA -- Pulse Time
3
2 0.2
10 0.1
7
5 0.05
3
2 0.02
1.0 0.01
7
5
3
2
0.1
7
5
3
2
Single Pulse
Surface mounted on ceramic substrate
(5000mm20.8mm)
0.01
0.000001
2
3
5 7 0.00001 2 3
5 7 0.0001 2 3
5 7 0.001 2 3 5 7 0.01
Pulse Time, PT -- s
2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
www.onsemi.com
5
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EFC3C001NUZ | Power MOSFET ( Transistor ) | ON Semiconductor |
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