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PDF TGA2976-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2976-SM | |
| Descripción | 10W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Commercial and military radar
Communications
Electronic Warfare
TGA2976-SM
0.1 – 3.0 GHz 10 W GaN Power Amplifier
Product Features
Frequency Range: 0.1 – 3.0 GHz
PSAT: >40 dBm at PIN = 27 dBm
PAE: 48% @ midband
Large Signal Gain: >13 dB
Small Signal Gain: >20 dB
Bias: VD = 40 V, IDQ = 360 mA, VG1 = -2.4 V Typical,
VG2 = +17.7 V Typical
Wideband Flat Gain and Power
Package Dimensions: 4.0 x 4.0 x 1.64 mm
AC-QFN 4x4 mm 14L
Functional Block Diagram
14 13 12 11
1
RF IN 2
3
10
9 RF OUT
8
4 567
General Description
Pad Configuration
Qorvo’s TGA2976-SM is a wideband cascode amplifier
fabricated on Qorvo’s production 0.25um GaN on SiC
process. The cascode configuration offers exceptional
wideband performance as well as supporting 40 V
operation. The TGA2976-SM operates from 0.1 - 3.0
GHz and provides greater than 10 W of saturated output
power with greater than 13 dB of large signal gain and
greater than 38% power-added efficiency.
The TGA2976-SM is available in a low-cost, surface
mount 14 lead 4x4 Air Cavity laminate package. It is
ideally suited to support both radar and communication
applications across defense and commercial markets as
well as electronic warfare. The TGA2976-SM is fully
matched to 50Ω at both RF ports allowing for simple
system integration. DC blocks are required on both RF
ports and the drain voltage must be injected through an
off chip bias-tee on the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad No.
1, 3, 8, 10
2
4, 14
5, 7, 11, 13
6, 12
9
Symbol
GND
RF IN
VG1
N/C
VG2
RF OUT / VD
Ordering Information
Part
TGA2976-SM
ECCN
EAR99
Description
0.1 – 3.0 GHz 10 W
GaN Power Amplifier
Datasheet: Rev A 03-02-16
© 2016 TriQuint
- 1 of 18 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2976-SM
0.1 – 3.0 GHz 10 W GaN Power Amplifier
Typical Performance: Large Signal (CW)
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 12)
Output Power vs. Frequency vs. IDQ
43
42 PIN = 27dBm
41
40
39
38 120 mA
37 360 mA
36
Temp. = +25°C
35
VD = 40 V
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
65
60
55
50
45
40
35
30
25
20
0
PAE vs. Frequency vs. IDQ
Temp. = +25°C
PIN = 27dBm
VD = 40 V
120 mA
360 mA
0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
800 Drain Current vs. Frequency vs. IDQ
Temp. = +25°C
PIN = 27dBm
700
600
500
400 120 mA
360 mA
300
VD = 40 V
200
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
5.0 Gate1 Current vs. Frequency vs. IDQ
4.5 Temp. = +25°C
PIN = 27dBm
4.0
3.5
3.0 360 mA
2.5 120 mA
2.0
1.5
1.0
0.5
VD = 40 V
0.0
-0.5
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
5.0 Gate2 Current vs. Frequency vs. IDQ
4.5 Temp. = +25°C
PIN = 27dBm
4.0
3.5
3.0
2.5
2.0
1.5
1.0 VD = 40 V
0.5 120 mA 360 mA
0.0
-0.5
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Datasheet: Rev A 03-02-16
© 2016 TriQuint
- 5 of 18 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2976-SM
0.1 – 3.0 GHz 10 W GaN Power Amplifier
Typical Performance: Large Signal (CW), On-board vs. External Coaxial Bias-T
The plots below reflect performance measured between external bias tee and on-board bias tee
(See application circuit on pages 12 and 14)
Output Power vs. Freq vs. Input Power
43
Temp. = +25°C
42
VD = 40 V, IDQ = 360 mA
41
40
39
38
External Bias-T
37 On-Board Bias-T
36
PIN = 27dBm
35
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
PAE vs. Frequency vs. Input Power
65
60 VD = 40 V, IDQ = 360 mA
55 External Bias-T
50 On-Board Bias-T
45
40
35
30
25 Temp. = +25°C
20
PIN = 27dBm
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Datasheet: Rev A 03-02-16
© 2016 TriQuint
- 11 of 18 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet TGA2976-SM.PDF ] | |
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