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PDF TGA2595 Data sheet ( Hoja de datos )
| Número de pieza | TGA2595 | |
| Descripción | 9W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Product Description
Qorvo’s TGA2595 is a balanced Ka-band power amplifier
fabricated on Qorvo’s 0.15 um GaN on SiC process. The
balanced configuration supports low return loss and
improves robustness into non-ideal loads.
Operating from 27.5 to 31 GHz, it achieves 9 W saturated
output power, power-added efficiency of 24 % and 23 dB
small signal gain. Along with excellent linear
characteristics, the TGA2595 is ideally suited to support
both commercial and defense related satellite
communications.
To simplify system integration, the TGA2595 is fully
matched to 50 Ω with integrated DC blocking caps on both
I/O ports.
The TGA2595 is 100 % DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Product Features
Frequency Range: 27.5 to 31 GHz
POUT: 39.5 dBm (PIN = 22 dBm), CW
PAE: 24 % (PIN = 22 dBm), CW
Small Signal Gain: 23 dB
Return Loss: 20 dB
IM3 @ 33 dBm/tone: −30 dBc
IM5 @ 33 dBm/tone: −35 dBc
Bias: VD = +20 V, IDQ = 280 mA, VG = −3.0 V Typical
Chip Dimensions: 3.60 x 3.24 x 0.10 mm
Functional Block Diagram
23 4 5
6
Applications
Satellite Communications
1
7
12 11 10 9
8
Rev. A
Ordering Information
Part No.
TGA2595
ECCN
3A001.b.2.c
Description
27.5 – 31 GHz 9 W GaN
Power Amplifier
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1 page  
Typical Performance – Large Signal
TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Output Power vs. Freq. vs. Temperature
42
VD = 20 V, IDQ = 280 mA, PIN = 22 dBm
41
40
39
38
37 +85 °C
+25 °C
36
35
34
33
32
26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
PAE vs. Frequency vs. Temperature
30
VD = 20 V, IDQ = 280 mA, PIN = 22 dBm
28
26
24
22
20 +85 °C
18 +25 °C
16
14
12
10
26 27 28 29 30 31 32 33 34
Frequency (GHz)
35
Output Power vs. Input Power vs. Frequency
42
VD = 20 V, IDQ = 280 mA
Temp. = +25 °C
40
38
36
34
32 27 GHz
30 28 GHz
29 GHz
28 30 GHz
26 31 GHz
32 GHz
24
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Input Power (dBm)
Output Power vs. Freq. vs. Temperature
42
VD = 20 V, IDQ = 560 mA, PIN = 22 dBm
41
40
39
38
+85 °C
37 +25 °C
36
35
34
33
32
26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
PAE vs. Frequency vs. Temperature
30
VD = 20 V, IDQ = 560 mA, PIN = 22 dBm
28
26
24
22
20
18
16 +85 °C
+25 °C
14
12
10
26 27 28 29 30 31 32 33 34
Frequency (GHz)
35
Output Power vs. Input Power vs. Frequency
42
VD = 20 V, IDQ = 560 mA
Temp. = +25 °C
40
38
36
34 27 GHz
28 GHz
32 29 GHz
30 30 GHz
31 GHz
28 32 GHz
26
24
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Input Power (dBm)
Rev. A
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5 Page 
Mechanical Drawing
TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
23 4 5
1
6
11
12
10
9
7
8
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: ± 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad Description
Pad No. Symbol Pad Size
1
RF In
0.125 x 0.200
2, 12
VG1
0.125 x 0.125
3, 11
VG2
0.125 x 0.125
4, 10
VG3
0.125 x 0.125
5, 9 VD12
0.125 x 0.125
6, 8 VD3
0.200 x 0.125
7
RF Out
0.125 x 0.200
Description
Input; matched to 50 Ω; DC blocked.
Gate voltage, VG1 top and bottom. Bias network is required; must be biased
from both sides; see Application Circuit on page 9 as an example.
Gate voltage, VG2 top and bottom. Bias network is required; must be biased
from both sides; see Application Circuit on page 9 as an example.
Gate voltage, VG1 top and bottom. Bias network is required; must be biased
from both sides; see Application Circuit on page 9 as an example.
Drain voltage, VD12 top and bottom. Bias network is required; must be
biased from both sides; see Application Circuit on page 9 as an example.
Drain voltage, VD3 top and bottom. Bias network is required; must be
biased from both sides; see Application Circuit on page 9 as an example.
Output; matched to 50 Ω; DC blocked.
Rev. A
- 11 of 13 -
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2595.PDF ] | |
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