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PDF TGA2594 Data sheet ( Hoja de datos )
| Número de pieza | TGA2594 | |
| Descripción | 5W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Satellite Communications
TGA2594
27-31GHz 5W GaN Power Amplifier
Product Features
Frequency Range: 27 – 31GHz
Psat: 37dBm (typical across frequency)
PAE: 28%
Small Signal Gain: 23dB
Input Return Loss: 10dB
IM3 @ 25dBm/tone: -36dBc
IM5 @ 25dBm/tone: -45dBc
Bias: VD = 20V, IDQ = 140mA, VG = -3.0V Typical
Chip Dimensions: 3.24 x 1.74 x 0.10mm
Functional Block Diagram
234
5
6
17
12 11 10
9
8
General Description
TriQuint’s TGA2594 is a Ka-band power amplifier
fabricated on TriQuint’s 0.15um GaN on SiC process.
Operating from 27 to 31GHz, it achieves 5W saturated
output power with an efficiency of 28% PAE, and 23dB
small signal gain. Along with excellent linear
characteristics, the TGA2594 is ideally suited to support
both commercial and defense related satellite
communications.
To simplify system integration, the TGA2594 is fully
matched to 50 ohms with integrated DC blocking caps
on both I/O ports.
The TGA2594 is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2, 12
3, 11
4, 10
5, 9
6, 8
7
Symbol
RF In
VG1
VG2
VG3
VD12
VD3
RF Out
Ordering Information
Part
TGA2594
ECCN Description
3A001.b.2.c
27-31GHz 5W GaN
Power Amplifier
Preliminary Datasheet: Rev A 01-08-14
© 2013 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
Typical Performance
Output Power vs. Frequency
39
Temp. = +25 °C
PIN = 18 dBm
38
37
36
35
34
VD = 20 V, IDQ = 140 mA
33
26 27 28 29 30 31 32 33 34
Frequency (GHz)
TGA2594
27-31GHz 5W GaN Power Amplifier
33
Temp. = +25 °C
30
PAE vs. Frequency
PIN = 18 dBm
27
24
21
18
VD = 20 V, IDQ = 140 mA
15
26 27 28 29 30 31 32 33 34
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
39
Temp. = +25 °C
37
35
33
28 GHz
31 29 GHz
30 GHz
29 31 GHz
VD = 20 V, IDQ = 140 mA
27
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Power Gain vs. Input Power vs. Freq.
28
VD = 20 V, IDQ = 140 mA
Temp. = +25 °C
26
24
22
20 28 GHz
29 GHz
18 30 GHz
31 GHz
16
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
1200
1000
Drain Current vs. Input Power vs. Freq.
Temp. = +25 °C
VD = 20 V, IDQ = 140 mA
800
600
400
28 GHz
29 GHz
200
30 GHz
31 GHz
0
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Preliminary Datasheet: Rev A 01-08-14
© 2013 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2594
27-31GHz 5W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Datasheet: Rev A 01-08-14
© 2013 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2594.PDF ] | |
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