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PDF TGA2590 Data sheet ( Hoja de datos )

Número de pieza TGA2590
Descripción 30W GaN Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGA2590 Hoja de datos, Descripción, Manual

Applications
Electronic Warfare
Commercial and Military Radar
TGA2590
6-12 GHz 30W GaN Power Amplifier
Product Features
Frequency Range: 6 - 12 GHz
Output Power: > 45 dBm (PIN = 23 dBm)
PAE: > 25 % (PIN = 23 dBm)
Large Signal Gain: > 22.0 dB
VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.
Chip Dimensions: 5.4 mm x 7.0 mm x 0.10 mm
Functional Block Diagram
General Description
TriQuint’s TGA2590 is a wideband power amplifier
fabricated on TriQuint’s production 0.25um GaN on
SiC process. The TGA2590 operates from 6 - 12GHz
and provides greater than 30W of saturated output
power with greater than 22 dB of large signal gain and
greater than 25% power-added efficiency.
The TGA2590 is fully matched to 50Ω with DC blocking
caps at both RF ports allowing for simple system
integration. The broadband performance supports
electronic warfare and radar across defense and
commercial markets.
Pad Configuration
1
2, 14
3, 13
4, 12
5, 11
6, 10
7, 9
8
Pad No.
Symbol
RF In
VG1
VG2
VD1
VD2
VG3
VD3
RF Out
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
The information contained on this data sheet is
technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or
transfer contrary to US law is prohibited.
Ordering Information
Part
ECCN
Description
TGA2590 3A001.b.2.b
6-12 GHz 30W PA
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com

1 page




TGA2590 pdf
Typical Performance
Power Added Eff. vs. Frequency vs. Temp.
45
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
40
35
30
25
20 - 40 °C
+25 °C
15 +85 °C
10
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
TGA2590
6-12 GHz 30W GaN Power Amplifier
Power Added Eff. vs. Frequency vs. Temp.
45
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
40
35
30
25
20 - 40 °C
+25 °C
15 +85 °C
10
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
28
26
24
22
20
18
16
14
12
10
4
Power Gain vs. Frequency vs. Temp.
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
- 40 °C
+25 °C
+85 °C
5 6 7 8 9 10 11 12 13
Frequency (GHz)
14
28
26
24
22
20
18
16
14
12
10
4
Power Gain vs. Frequency vs. Temp.
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
- 40 °C
+25 °C
+85 °C
5 6 7 8 9 10 11 12 13
Frequency (GHz)
14
Drain Current vs. Frequency vs. Temp.
8
VD = 20 V, IDQ = 2.0 A, Pin = 23 dBm
7
6
5
4
- 40 °C
3
+25 °C
2 +85 °C
1
0
4 5 6 7 8 9 10 11 12 13
Frequency (GHz)
14
Drain Current vs. Frequency vs. Temp.
8
VD = 25 V, IDQ = 2.0 A, Pin = 23 dBm
7
6
5
4
3
2 - 40 °C
+25 °C
1 +85 °C
0
4 5 6 7 8 9 10 11 12 13
Frequency (GHz)
14
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com

5 Page





TGA2590 arduino
TGA2590
6-12 GHz 30W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment (i.e. epoxy) can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Datasheet: Rev - 05-08-14
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com

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