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PDF TGA2239 Data sheet ( Hoja de datos )
| Número de pieza | TGA2239 | |
| Descripción | 35W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Satellite Communications
Data Link
Radar
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Product Features
Frequency Range: 13 – 15.5 GHz
PSAT: >45.5 dBm @ PIN = 21 dBm
PAE: >32% @ PIN = 21 dBm
Large Signal Gain: >24.5 dB
Small Signal Gain: 29.5 dB
Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical
Process Technology GaN-TQGaN15
Chip Dimensions: 5.00 x 6.65 x 0.10 mm
Performance Under CW Operation
Functional Block Diagram
23
4
5
1
10 9
8
7
6
General Description
TriQuint’s TGA2239 is a Ku-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.15um GaN
on SiC process. The TGA2239 operates from 13 – 15.5
GHz and provides a superior combination of power, gain
and efficiency by achieving greater than 35 W of
saturated output power with 24.5dB of large signal gain
and greater than 32% power-added efficiency.
This superior performance provides system designers the
flexibility to improve system performance while reducing
size and cost.
The TGA2239 is fully matched to 50 Ohms with
integrated DC blocking capacitors on RF ports simplifying
system integration. It is ideally suited for military and
commercial Ku-band radar and satellite communication
systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
3, 9
4, 8
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2239
ECCN Description
3A001.b.2.b
13 – 15.5 GHz 35W
GaN Power Amplifier
Preliminary Datasheet: Rev - 12-12-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Typical Performance (CW Operation)
Output Power vs. Frequency vs. Voltage
47
Temp. = 25 °C
46
45
44
43
42
41
40
12
18 V
20 V
22 V
IDQ = 900 mA
12.5 13 13.5 14 14.5
Frequency (GHz)
PIN = 21 dBm
15 15.5 16
Output Power vs. Frequency vs. Temp.
47
46
45
44
43
-40 °C, PIN = 18 dBm
42
25 °C, PIN = 21 dBm
85 °C, PIN = 24 dBm
41
VD = 22 V, IDQ = 900 mA
40
12 12.5 13 13.5 14 14.5 15 15.5 16
Frequency (GHz)
Output Power vs. Input Power vs. Voltage
47
46 Temp. = 25 °C
45
44 Freq. = 14.5 GHz
43
42
41
40 18 V
39 20 V
38 22 V
37
36 IDQ = 900 mA
35
5 7 9 11 13 15 17 19 21 23
Input Power (dBm)
25
47 Output Power vs. Frequency vs. PIN
Temp. = 25 °C
46
45
44
43
42
41
40
12
12.5
18 dBm
19 dBm
20 dBm
21 dBm
24 dBm
VD = 22 V, IDQ = 900 mA
13 13.5 14 14.5 15
Frequency (GHz)
15.5
16
Preliminary Datasheet: Rev - 12-12-14
© 2014 TriQuint
Output Power vs. Input Power vs. Freq.
47
Temp. = 25 °C
46
45
44
43
42
41
40 13.75 GHz
39 14.50 GHz
38 15.50 GHz
37
36 VD = 22 V, IDQ = 900 mA
35
5 7 9 11 13 15 17 19 21 23
Input Power (dBm)
25
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Application Circuit
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
C11
0.01 uF
C7
10 uF
C12
0.01 uF
C1
1000 pF
R5
5.1 Ohms
C2 C3
1000 pF 1000 pF
23
4
5
C8
10 uF
R6
5.1 Ohms
VG = -2.7 V
Typical
1
J1
RF In
6
J2
RF Out
VD = 22 V,
IDQ = 900 mA
10 9
8
7
C4
1000 pF
R7
5.1 Ohms
C13 C9
0.01 uF 10 uF
C5 C6
1000 pF 1000 pF
C14
0.01 uF
R8
5.1 Ohms
C10
10 uF
Notes:
VG & VD must be biased from both sides top and bottom.
Bias-up Procedure
1. Set ID limit to 6 A, IG limit to 50 mA
2. Set VG to -5.0 V
3. Set VD +22 V
4. Adjust VG more positive until IDQ = 900 mA (VG ~ -2.7
V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0 V. Ensure IDQ ~ 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Preliminary Datasheet: Rev - 12-12-14
© 2014 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TGA2239.PDF ] | |
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