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PDF TGA2237 Data sheet ( Hoja de datos )
| Número de pieza | TGA2237 | |
| Descripción | 10W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Applications
Commercial and military radar
Communications
Electronic Warfare
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Product Features
Frequency Range: 0.03 – 2.5GHz
PSAT: 40dBm at PIN = 27dBm
P1dB: >32dBm
PAE: >52%
Large Signal Gain: 13dB
Small Signal Gain: 19dB
IM3 @ 120mA POUT< 33dBm/tone: -30dBc
IM5 @ 120mA POUT< 33dBm/tone: -30dBc
Bias: VD = 30V, IDQ = 360mA, VG = -2.5V Typical
Wideband Flat Power
Chip Dimensions: 2.4 x 1.8 x 0.10 mm
Functional Block Diagram
2
J1
RF In
1
J2
RF Out
3
General Description
TriQuint’s TGA2237 is a wideband distributed amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process. The TGA2237 operates from 0.03 – 2.5GHz
and provides 10W of saturated output power with 13dB of
large signal gain and greater than 52% power-added
efficiency.
The broadband performance supports both radar and
communication applications across defense and
commercial markets as well as electronic warfare. The
TGA2237 is fully matched to 50Ω at both RF ports
allowing for simple system integration. DC blocks are
required on both RF ports and the drain voltage must be
injected through an off chip bias-tee on the RF output
port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
Symbol
RF In
VG
RF Out, VD
Ordering Information
Part
TGA2237
ECCN
EAR99
Description
0.03 – 2.5GHz 10W
GaN Power Amplifier
Preliminary Datasheet: Rev - 02-21-14
© 2014 TriQuint
- 1 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Typical Performance
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 10)
Output Power vs. Frequency vs. VD
42
PIN = 27dBm
40
38
36
34
32
30
0
Vd=25V
Vd=28V
Vd=30V
Vd=32V
0.5 1
IDQ = 360mA
Temp. = +25°C
1.5 2 2.5 3 3.5 4
Frequency (GHz)
80
70
60
50
40
30
20
0
PAE vs. Frequency vs. VD
Temp. = +25°C
PIN = 27dBm
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 360mA
0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Output Power vs. Freq vs. Input Power
42
Temp. = +25°C
40
38
36
34 24dBm
25dBm
32 26dBm
VD = 30V, IDQ = 360mA
30
27dBm
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
PAE vs. Frequency vs. Input Power
80
VD = 30V, IDQ = 360mA
Temp. = +25°C
70
60
50
40 24dBm
25dBm
30 26dBm
27dBm
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
42
PIN = 27dBm
40
38
36
34 -40C
+25C
32 +85C
VD = 30V, IDQ = 360mA
30
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
PAE vs. Frequency vs. Temperature
80
VD = 30V, IDQ = 360mA
70
60
50
40 -40C
30
PIN = 27dBm
20
+25C
+85C
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Preliminary Datasheet: Rev - 02-21-14
© 2014 TriQuint
- 5 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Assembly Drawing (Coaxial input DC block and coaxial output bias tee)
Bill of Materials
Reference Design
C1
C2
C3
C4
R1 – R2
Value
1000pF
0.01uF
10uF
10Ω
Description
SLC, 50V
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
DC Block
Res, 0402
Manufacturer
Various
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev - 02-21-14
© 2014 TriQuint
- 11 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet TGA2237.PDF ] | |
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