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Número de pieza DMC1030UFDBQ
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC1030UFDBQ Hoja de datos, Descripción, Manual
DMC1030UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1
N-Channel
12V
Q2
P-Channel
-12
RDS(ON) MAX
34mΩ @ VGS = 4.5V
40mΩ @ VGS = 2.5V
50mΩ @ VGS = 1.8V
70mΩ @ VGS = 1.5V
59m@ VGS = -4.5V
81mΩ @ VGS = -2.5V
115mΩ @ VGS = -1.8V
215mΩ @ VGS = -1.5V
ID MAX
TA = +25°C
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6 (Type B)
ESD PROTECTED
D2
D2
G1
S1
Pin1
S2
G2
DD1
D1
Bottom View
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D1 D2
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMC1030UFDBQ-7
DMC1030UFDBQ-13
Case
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
D3 = Product Type Marking Code
YM = Date Code Marking
D3 Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 9
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
January 2016
© Diodes Incorporated

1 page

DMC1030UFDBQ pdf
DMC1030UFDBQ
Electrical Characteristics Q2 P-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Min
-12
-0.4
Typ
37
48
69
88
-0.7
1028
285
254
19.6
13
20.8
1.8
4.5
5.6
12.8
30.7
25.4
31.6
7.8
Max
-1.0
±10
-1
59
81
115
215
-1.2
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -12V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.6A
mΩ VGS = -2.5V, ID = -3.1A
VGS = -1.8V, ID = -2.6A
VGS = -1.5V, ID = -0.5A
V VGS = 0V, IS = -3.7A
pF
pF VDS = -6V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -10V, ID = -4.7A
nC
ns
ns VDD = -6V, VGS = -4.5V,
ns RL = 1.6Ω, RG = 1Ω
ns
ns IS = -3.6A, dI/dt = 100A/μs
nC IS = -3.6A, dI/dt = 100A/μs
20
18
16
14
12
10
8
6
4
2
00
VGS = -4.5V
VGS = -4.0V
VGS = -3.5V
VGS = -2.0V
VGS = -3.0V
VGS = -1.8V
VGS = -1.5V
VGS = -1.0V
VGS = -0.9V
0.5 1
1.5 2
2.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
3
20
18 VDS = -5.0V
16
14
12
10
8
6
TA = 150C
4 TA = 85C
TA = 125C
2 TA = 25C
TA = -55C
0
0 0.5 1 1.5 2 2.5 3
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Transfer Characteristics
DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
5 of 9
www.diodes.com
January 2016
© Diodes Incorporated

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