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PDF FMH47N60S1 Data sheet ( Hoja de datos )

Número de pieza FMH47N60S1
Descripción N-Channel enhancement mode power MOSFET
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! FMH47N60S1 Hoja de datos, Descripción, Manual

FMH47N60S1
Super J-MOS series
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Outline Drawings [mm]
TO-3P
15.5max
13 ± 0.2
10 ± 0.2
φ3.2± 0.1
1.5±0.2
4.5±0.2
1.6
+0.3
-0.1
2.2
+0.3
-0.1
5.45 ± 0.2
1.6
+0.3
-0.1
1.1
+0.2
-0.1
5.45 ± 0.2
PRE-SOLDER
0.5
+0.2
0
1.5
CONNECTION
1 GATE
2 DRAIN
3 SOURCE
JEDEC : TO-3P
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Symbol
VDS
VDSX
Continuous Drain Current
ID
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
IDP
VGS
IAR
EAS
dVDS/dt
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=7.6A, L=40.2mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-23.5A, -di/dt=80A/μs, VDD≤300V, Tch≤150°C.
Note *5 : IF≤-23.5A, dV/dt=13kV/μs, VDD≤300V, Tch≤150°C.
Characteristics
600
600
±47
±29.7
±141
±30
9.5
1267.4
50
13
80
2.5
390
150
-55 to +150
Electrical Characteristics at TC=25°C (unless otherwise specified)
• Static Ratings
Description
Symbol Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Gate resistance
IGSS
RDS(on)
RG
ID=250μA
VGS=0V
ID=250μA
VDS=VGS
VDS=600V
VGS=0V
VDS=480V
VGS=0V
VGS= ±30V
VDS=0V
ID=23.5A
VGS=10V
f=1MHz, open drain
Tch=25°C
Tch=125°C
min.
600
2.5
-
-
-
-
-
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
Remarks
VGS=-30V
Tc=25°C Note*1
Tc=100°C Note*1
Note *2
Note *3
VDS≤ 600V
Note *4
Note *5
Ta=25°C
Tc=25°C
typ.
-
3.0
-
-
10
0.059
1.1
max.
-
3.5
25
250
100
0.07
-
Unit
V
V
μA
nA
Ω
Ω
1 07942
May 2012

1 page




FMH47N60S1 pdf
FMH47N60S1
Typical Coss stored energy
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
100 200 300 400 500 600
VDS [V]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=47A,Vdd=480V,Tch=25°C
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180
Qg [nC]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Typical Switching Characteristics vs. ID Tch=25°C
t=f(ID):Vdd=400V,VGS=10V/0V,RG=8.2Ω, L=500uH
103
tr
102 td(off)
td(on)
tf
101
100
101
102
ID [A]
Maximum Avalanche Energy vs. startingTch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=9.5A
3000
IAS=3.8A
2500
2000
1500
IAS=7.6A
1000 IAS=9.5A
500
0
0 25 50 75 100 125 150
starting Tch [°C]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
t [sec]
100
5

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