DataSheet.es    


PDF GX3441 Data sheet ( Hoja de datos )

Número de pieza GX3441
Descripción RF POWER GAN TRANSISTOR
Fabricantes POLYFET RF DEVICES 
Logotipo POLYFET RF DEVICES Logotipo



Hay una vista previa y un enlace de descarga de GX3441 (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! GX3441 Hoja de datos, Descripción, Manual

polyfet rf devices
GX3441
General Description
Polyfet's GAN (on SiC) HEMT
power transistors contain no
internal matching; making them
suitable for both broadband and
narrow band applications.
The use of a thermally enhanced
package enables this device to
have superior heat dissipation
properties. The high drain break
down voltage permits this device
to operate over a wide voltage
range.
RF POWER GAN TRANSISTOR
80.0 Watts Single Ended
Package Style GX
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Suitable for use across 1-3000Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Total
Device
Dissipation
95 Watts
Junction to
Case Thermal
Resistance
o
3.00 C/W
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
Drain to
Source
Voltage
180 V
Gate to
Source
Voltage
-10 V to + 2 V
RF CHARACTERISTICS ( 80.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Gps Common Source Power Gain
Drain Efficiency
12
60
dB Idq = 0.22 A, Vds = 48.0 V, F = 2,000 MHz
% Idq = 0.22 A, Vds = 48.0 V, F = 2,000 MHz
VSWR Load Mismatch Tolerance
10:1 Relative Idq = 0.22 A, Vds = 48.0 V, F = 2,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Bvdss Drain Breakdown Voltage
250
V Ids = 10.00mA, Vgs = -8V
Idsat
Saturation Current
8.50
Amp
Vgs = +2V, Vds = 10V
Idss
Vgs
Ciss
Crss
Zero Bias Drain Current
Gate Bias for Drain Current
Common Source Input Capacitance
Common Source Feedback Capacitance
-2.5
10.0
0.45
3.0 mA
V
pF
pF
Vds = 48.0 V, Vgs = -8V
Vds = 48.0 V Ids = 0.22A
Vds = 48.0 Vgs =-8V, F = 1 MHz
Vds = 48.0 Vgs =-8V, F = 1 MHz
Coss Common Source Output Capacitance
6.0 pF Vds = 48.0 Vgs =-8V, F = 1 MHz
POLYFET RF DEVICES
REVISION 09/09/2013
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet GX3441.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
GX3441RF POWER GAN TRANSISTORPOLYFET RF DEVICES
POLYFET RF DEVICES
GX3442RF POWER GAN TRANSISTORPOLYFET RF DEVICES
POLYFET RF DEVICES

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar