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Número de pieza MA4AGSW4
Descripción SP4T AlGaAs PIN Diode Switch
Fabricantes MA-COM 
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MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.7 dB Insertion Loss
32 dB Isolation at 50 GHz
Low Current consumption
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
DESCRIPTION
The MA4AGSW4 is an Aluminum-Gallium-Arsenide,
single pole, four throw (SP4T), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode air
-bridges during handling and assembly. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Yellow areas indicate bond pads
J3 J4
J2 J5
J1
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
Bias Current
± 25mA
Assembly Temperature
Junction Temperature
+300°C < 10 sec
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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MA4AGSW4 pdf
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Operation of the MA4AGSW4 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching ports is required for the operation of the MA4AGSW4, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2, J3, J4 & J5 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The
bias network design shown below should yield > 30 dB RF to DC Isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information.
The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW4 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
J2 J3 J4 J5
-10mA
+10mA
+10mA
+10mA
+10mA
-10mA
+10mA
+10mA
+10mA
+10mA
-10mA
+10mA
+10mA
+10mA
+10mA
-10mA
CONDITION OF RF OUTPUT
J2-J1
J3-J1
J4-J1
J5-J1
Low Loss Isolation Isolation Isolation
Isolation Low Loss Isolation Isolation
Isolation Isolation Low Loss Isolation
Isolation Isolation Isolation Low Loss
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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