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PDF 10EDB60 Datasheet ( Hoja de datos )

Número de pieza 10EDB60
Descripción AXIAL LEADED SILICON RECTIFIER DIODES
Fabricantes SUNMATE 
Logotipo SUNMATE Logotipo

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10EDB60 Hoja de datos, Descripción, Manual
10EDB60
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 600V
CURRENT: 1.0 A
Features
! Miniature Size
! Low Forward Voltage drop
! Low Reverse Leakage Current
! High Surge Capability
Mechanical Data
! Case: D O - 4 1
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
ABA
D
DO-41
Dim Min Max
A 25.40 ¾
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
C
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Average Rectified Output Current
50Hz Half Sine Wave
Resistive Load
Ta=39 °C *1
Ta=26 °C *2
RMS Forward Current
Surge Forward Current
50Hz Half Sine Wave,1cycle,
Non-repetitive
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
IO
IF(RMS)
I FSM
T jw
T stg
10EDB60
600
1.0
0.9
1.57
45
- 40 to + 150
- 40 to + 150
Unit
V
A
A
A
°C
°C
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
I RM
VFM
Rth(j-a)
Tj= 25 ° C, VRM= VRRM
Tj= 25 °C, IFM = 1.0A
Junction to P.C. Board mounted*1
Ambient
Without Fin *2
*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)
*2: Without Fin or P.C. Board mounted
Min. Typ. Max. Unit
- - 10 µA
- - 1.0 V
-
-
-
-
110
140
°C/W
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