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PDF PESD5V0L5UK Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0L5UK | |
| Descripción | Low capacitance unidirectional fivefold ESD protection diode arrays | |
| Fabricantes | NXP Semiconductors | |
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PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
ESD protection of up to five lines
Low diode capacitance
Max. peak pulse power: PPP = 30 W
Low clamping voltage: VCL = 9.5 V
AEC-Q101 qualified
Very low leakage current: IRM = 0.5 μA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 3.2 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
Cd diode capacitance
PESD3V3L5UK
f = 1 MHz; VR = 0 V
PESD5V0L5UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 20 24 pF
-
18.5 22
pF
1 page  
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
IRM reverse leakage current
PESD3V3L5UK
VRWM = 3.3 V
PESD5V0L5UK
VRWM = 5.0 V
VBR breakdown voltage
IR = 1 mA
PESD3V3L5UK
PESD5V0L5UK
Cd diode capacitance
PESD3V3L5UK
f = 1 MHz;
VR = 0 V
PESD5V0L5UK
VCL clamping voltage
PESD3V3L5UK
IPP = 3.1 A
PESD5V0L5UK
IPP = 3 A
rdif differential resistance IR = 5 mA
PESD3V3L5UK
PESD5V0L5UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
-
0.4 2
μA
- 0.08 0.5 μA
5.3 5.6
6.47 6.8
5.9 V
7.14 V
-
-
[1][2]
-
-
-
-
20 24
18.5 22
pF
pF
- 9.5 V
- 9.9 V
5 16
2.5 8
Ω
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
11. Soldering
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
1.05
1.4 0.7
0.5 0.6
(6×) (6×)
solder resist
solder land plus
solder paste
occupied area
Dimensions in mm
0.15
(6×)
0.25
(6×)
0.35
Reflow soldering is the only recommended soldering method.
Fig 11. Reflow soldering footprint SOT891
sot891_fr
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PESD5V0L5UK.PDF ] | |
Hoja de datos destacado
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| PESD5V0L5UV | (PESD3V3L5UV / PESD5V0L5UV) Low capacitance 5-fold ESD protection diode arrays | NXP Semiconductors |
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