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Número de pieza | ICE7N60FP | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Icemos | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ICE7N60FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! ICE7N60FP
ICE7N60FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
7A
ID=250uA 600V
VGS=10V
VDS=480V
0.57Ω
23nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current a
Pulsed drain current a
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25°C
Tc=100°C
Tc=25°C
ID=3.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=7A,
Tj=125°C
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Operating and storage temperature
Mounting torque b
Ptot
Tj, Tstg
Tc=25°C
M 2.5 screws
a Limited by Tjmax
b When mounted on 1inch square 2oz copper clad FR-4
Value
7
4
21
170
3.5
50
±20
±30
35
-55 to +150
50
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
SP-7N60FP-000-6
06/27/2014
1
1 page ICE7N60FP
10000
1000
100
Capacitance
Ciss
Coss
Source-Drain Diode Forward Voltage
100
10
TJ = 125˚C
TJ = 25˚C
10
1
0
Crss
50 100 150
VDS - Drain-to-Source Voltage (V)
200
1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
RDS(on) Limited
VGS=10V
10 TA = 25oC,
Single Pulse
1
10µs
100µs
1ms
0.1
0.01
0.1
RDS(on) Limit
Package Limit
Thermal Limit
1 10 100
VDS - Drain-to-Source Voltage (V)
10ms
DC
1000
Transient Thermal Response, Junction-to-Ambient
1.00
0.50
0.20
0.10
0.10
0.05
0.02
0.01
1.2
SP-7N60FP-000-6
06/27/2014
Single Pulse
0.00
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t - Time (seconds)
1.0E-01
1.0E+00
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet ICE7N60FP.PDF ] |
Número de pieza | Descripción | Fabricantes |
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ICE7N60FP | N-Channel Enhancement Mode MOSFET | Icemos |
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