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PDF ICE47N60W Data sheet ( Hoja de datos )
| Número de pieza | ICE47N60W | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Micross Components | |
| Logotipo |  |
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ICE47N60W
N-Channel Enhancement Mode MOSFET
Features:
TO247 Package
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
47A
600V
0.063Ω
187nC
Pin Description:
TO-247
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
47
117
1600
24
50
±20
±30
417
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 24A
Limited by Tjmax
VDS = 480V, ID = 47A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 3 & 3.5 screws
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
-
RthJA Thermal Resistance, Junction to Ambient
-
Tsold
Soldering Temperature, Wave Soldering Only Al-
-
lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600
2.1
-
-
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
-
-
-
RGS Gate Resistance
-
-
-
-
640
3
0.5
-
-
0.063
0.17
6
0.3
62
260
-
3.59
10
250
200
0.07
-
-
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 1mA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
Ω VGS = 10V, ID = 24A, Tj = 25°C
VGS = 10V, ID = 24A, Tj = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
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