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PDF GDSSF3611E Data sheet ( Hoja de datos )
| Número de pieza | GDSSF3611E | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
-30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
GDSSF3611E
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-12
-7.4
-48
2
-30
± 20
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
Max.
62.5
Units
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
1 page  
GDSSF3611E
Ordering and Marking Information
Device Marking: SSF3611E
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/
Type
Tape
SOP-8
2500
Tapes/Inner
Box
2
Units/Inner
Box
5000
Inner
Boxes/Carton
Box
8
Units/Carton
Box
40000
Suzhou Goodark Electronics Co., Ltd
Version 1.0
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GDSSF3611E.PDF ] | |
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