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PDF GDSSF2816EB Data sheet ( Hoja de datos )
| Número de pieza | GDSSF2816EB | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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DESCRIPTION
The SSF2816EB uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.75V.
GDSSF2816EB
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2500V HBM
● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2816EB
SSF2816EB
TSSOP-8
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GDSSF2816EB.PDF ] | |
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