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PDF NPT2022 Data sheet ( Hoja de datos )
| Número de pieza | NPT2022 | |
| Descripción | GaN Wideband Transistor | |
| Fabricantes | MA-COM | |
| Logotipo |  |
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NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2 GHz
48 V Operation
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
Standard plastic package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2022 GaN HEMT is a wideband transistor
optimized for DC - 2 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 100 W (50 dBm) in an
industry standard plastic package.
The NPT2022 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
1
3
Rev. V1
Ordering Information
Part Number
NPT2022
NPT2022-SMBPPR
Package
Bulk Quantity
Sample Board
Pin Configuration
Pin No.
1
2
3
Pin Name
RFIN / VG
RFOUT / VD
Pad1
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1 page  
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
Rev. V1
VGS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
L1
19.4 nH
RFIN
C11
15 pF
C12
6.8 pF
R1
10
NPT2022
C9
10 pF
C10
33 pF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
C5
1.0 mF
VDS
L2
44 nH
C13
18 pF
C14
0.8 pF
C15
8.2 pF
RFOUT
Description
Parts measured on evaluation board (30-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5 Page 
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
TO272-2 Plastic Package†
Rev. V1
All dimensions shown as inches [millimeters].
† Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet NPT2022.PDF ] | |
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