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PDF 1SS302A Data sheet ( Hoja de datos )
| Número de pieza | 1SS302A | |
| Descripción | Silicon Epitaxial Planar Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Switching Diodes Silicon Epitaxial Planar
1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) Fast reverse recovery time : trr = 1.6 ns (typ.)
(2) AEC-Q101 qualified
3. Packaging and Internal Circuit
1SS302A
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
USM
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR
80
Peak forward current
IFM (Note 1)
300 mA
Average rectified current
IO (Note 1)
100
Power dissipation
PD (Note 2)
100 mW
Non-repetitive peak forward surge current
IFSM (Note 1), (Note 3)
2
A
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
Start of commercial production
2014-12
1 2015-01-08
Rev.2.0
1 page  
Package Dimensions
1SS302A
Unit: mm
Weight: 6.0 mg (typ.)
TOSHIBA: 2-2E1S
Nickname: USM
Package Name(s)
5 2015-01-08
Rev.2.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 1SS302A.PDF ] | |
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