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PDF KAF-09000 Data sheet ( Hoja de datos )

Número de pieza KAF-09000
Descripción CCD Image Sensor
Fabricantes ON Semiconductor 
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No Preview Available ! KAF-09000 Hoja de datos, Descripción, Manual

KAF-09000
3056 (H) x 3056 (V) Full
Frame CCD Image Sensor
Description
Combining high resolution with outstanding sensitivity, the
KAF09000 image sensor has been specifically designed to meet the
needs of nextgeneration low cost digital radiography and scientific
imaging systems. The high sensitivity available from 12micron
square pixels combines with a low noise architecture to allow system
designers to improve overall image quality, or to relax system
tolerances to achieve lower cost. The excellent uniformity of the
KAF09000 image sensor improves overall image integrity by
simplifying image corrections, while integrated antiblooming
protection prevents image bleed from overexposure in bright areas of
the image. To simplify device integration, the KAF09000 image
sensor uses the same pinout and package as the KAF16801 image
sensor.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard frontside
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD [Square Pixels]
Total Number of Pixels
3103 (H) x 3086 (V) = 9.6 Mp
Number of Effective Pixels
3085 (H) x 3085 (V) = 9.5 Mp
Number of Active Pixels
3056 (H) x 3056 (V) = 9.3 Mp
Pixel Size
Active Image Size
12 mm (H) x 12 mm (V)
36.7 mm (H) x 36.7 mm (V)
51.9 mm diagonal,
645 1.3x optical format
Aspect Ratio
Square
Horizontal Outputs
Saturation Signal
Output Sensitivity
Quantum Efficiency (550 nm)
Responsivity (550 nm)
Read Noise (f = 3 MHz)
1
110 ke
24 mV/e
64%
2595 ke/mJ/cm2
62.3 V/mJ/cm2
7 e
Dark Signal (T = 25°C)
5 e/pix/sec
Dark Current Doubling Temperature 7°C
Linear Dynamic Range (f = 4 MHz) 84 dB
Blooming Protection
(4 ms exposure time)
> 100 X saturation exposure
Maximum Data Rate
10 MHz
Package
CERDIP, (sidebrazed pins, CuW)
Cover Glass
AR coated 2 sides Taped Clear
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
February, 2015 Rev. 3
1
www.onsemi.com
Figure 1. KAF09000 CCD Image Sensor
Features
TRUESENSE Transparent Gate Electrode
for High Sensitivity
Large Pixel Size
Large Image Area
High Quantum Efficiency
Low Noise Architecture
Broad Dynamic Range
Applications
Medical
Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
KAF09000/D

1 page




KAF-09000 pdf
Output Load
KAF09000
VDD = +15 V
Iout = 5 mA
VOUT
140 W
2N3904
or Equiv.
1 kW
0.1 μF
Buffered
Video
Output
Note: Component values may be revised based on operating conditions and other design considerations.
Figure 4. Recommended Output Structure Load Diagram
www.onsemi.com
5

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KAF-09000 arduino
KAF09000
DEFECT DEFINITIONS
Operating Conditions
All cosmetic tests performed at approximately 25°C.
Table 6. SPECIFICATIONS
Classification
Standard Grade
Points
< 200
Clusters
< 20
Columns
< 10
Includes Dead Columns
yes
Point Defects
Dark: A pixel, which deviates by more than 6% from
neighboring pixels when illuminated to 70% of saturation
or
Bright: A Pixel with dark current > 3,000 e/pixel/sec at 25°C
Cluster Defect
A grouping of not more than 10 adjacent point defects
Cluster defects are separated by no less than 4 good pixels
in any direction
Column Defect
A grouping of more than 10 point defects along a single
column
or
A column containing a pixel with dark current
> 15,000 e/pixel/sec (bright column)
or
A column that does not meet the CTE specification for all
exposures less than the specified Max sat. signal level and
greater than 2 ke
A pixel, which loses more than 250 eunder 2 ke
illumination (trap defect)
Column defects are separated by no less than 4 good
columns. No multiple column defects (double or more) will
be permitted.
Column and cluster defects are separated by at least 4
good columns in the x direction.
www.onsemi.com
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