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PDF G4BC30W Data sheet ( Hoja de datos )

Número de pieza G4BC30W
Descripción IRG4BC30W
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! G4BC30W Hoja de datos, Descripción, Manual

PD - 91629A
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) max. = 2.70V
@VGE = 15V, IC = 12A
TO-220AB
Max.
600
23
12
92
92
± 20
180
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
80
–––
Units
°C/W
g
www.irf.com
1
4/24/2000

1 page




G4BC30W pdf
IRG4BC30W
2000
1500
1000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
500
0
1
Coes
Cres
10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 12A
16
12
8
4
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5
VCC = 480V
VGE = 15V
TJ = 25 °C
0.4 IC = 12A
0.3
0.2
0.1
0.0
0
10 20 30 40
RGR,G,GaGtaeteRReseissitsatannccee((Oh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = O23hm
VGE = 15V
VCC = 480V
1
0.1
IC = 24 A
IC = 12 A
IC = 6 A
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5

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