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PDF 2N7008-G Data sheet ( Hoja de datos )

Número de pieza 2N7008-G
Descripción N-Channel Enhancement-Mode Vertical DMOS FETs
Fabricantes Supertex 
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Supertex inc.
2N7008
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-drain diode
►High input impedance and high gain
Applications
►Motor controls
Converters
Amplifiers
Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7008 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Part Number
Package Option Packing
2N7008-G
TO-92
1000/Bag
2N7008-G P002 TO-92
2000/Reel
2N7008-G P003 TO-92
2000/Reel
2N7008-G P005 TO-92
2000/Reel
2N7008-G P013 TO-92
2000/Reel
2N7008-G PO14 TO-92
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±30V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Product Summary
BVDSX/BVDGS
RDS(ON)
(max)
60V 7.5 Ω
Pin Configuration
ID(ON)
500mA
SOURCE
DRAIN
GATE
TO-92
Product Marking
Si2N YY = Year Sealed
7 0 0 8 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Typical Thermal Characteristics
Package
θja
TO-92
132OC/W
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
Doc.# DSFP-2N7008
C062813
Supertex inc.
www.supertex.com

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