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PDF IRGBC20KD2-S Data sheet ( Hoja de datos )

Número de pieza IRGBC20KD2-S
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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PD - 9.1125
IRGBC20KD2-S
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast CoPack IGBT
Features
• Short circuit rated -10µs @125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n- cha nnel
VCES = 600V
VCE(sat) 3.5V
@VGE = 15V, IC = 6.0A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
SMD-220
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
10
6.0
20
20
7.0
20
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
Min. Typ.
RθJC
Junction-to-Case - IGBT
------
------
RθJC
RθJA
RθJA
Wt
Junction-to-Case - Diode
Junction-to-Ambient, (PCB Mount)**
Junction-to-Ambient, typical socket mount
Weight
------
------
-----
------
------
-----
-----
2 (0.07)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
2.1
3.5
40
80
------
Units
°C/W
g (oz)

1 page




IRGBC20KD2-S pdf
IRGBC20KD2-S
700
VGE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
600 Cres = C gc
Coes = Cce + C gc
500
Cies
400
C oes
300
200
Cres
100
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 480V
IC = 6.0A
16
12
8
4
0
0 4 8 12 16
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
20
0. 48 0
0. 47 5
VCC = 480V
VGE = 15V
TC = 25°C
IC = 6.0A
0. 47 0
0. 46 5
0. 46 0
0. 45 5
0. 45 0
20
25 30 35 40 45 50
R G, Gate Resistance ()
55
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
RG = 50
VGE = 15V
VCC = 480V
1
I C = 12A
IC = 6.0A
I C = 3.0A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature

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