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PDF TIP41AG Data sheet ( Hoja de datos )

Número de pieza TIP41AG
Descripción Complementary Silicon Plastic Power Transistors
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! TIP41AG Hoja de datos, Descripción, Manual

TIP41G, TIP41AG, TIP41BG,
TIP41CG (NPN),
TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
Epoxy Meets UL 94 V0 @ 0.125 in
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCEO
40
60
80
100
Vdc
CollectorBase Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCB Vdc
40
60
80
100
EmitterBase Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 6.0 Adc
ICM 10 Adc
IB 2.0 Adc
PD
65 W
0.52 W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
2.0 W
0.016
W/°C
Unclamped Inductive Load Energy
(Note 1)
E
62.5 mJ
Operating and Storage Junction,
Temperature Range
TJ, Tstg – 65 to +150
°C
ESD Human Body Model
HBM
3B
V
ESD Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
October, 2014 Rev. 11
1
www.onsemi.com
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
406080100 VOLTS,
65 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
1
BASE
3
EMITTER
3
EMITTER
4
12 3
TO220
CASE 221A
STYLE 1
MARKING DIAGRAM
TIP4xxG
AYWW
TIP4xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
TIP41A/D

1 page




TIP41AG pdf
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
500
300
200 TJ = 150°C
VCE = 2.0 V
2.0
1.6
TJ = 25°C
100
70 25°C
50
30
20 - 55°C
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
4.0 6.0
1.2 IC = 1.0 A 2.5 A 5.0 A
0.8
0.4
0
10 20 30 50
100 200 300 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6
1.0
2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
+ 2.5
+ 2.0 *APPLIES FOR IC/IB hFE/4
+ 1.5
+ 1.0
+ 0.5
* qVC FOR VCE(sat)
0
- 0.5
- 1.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 1.5 qVB FOR VBE
- 2.0
- 55°C to + 25°C
- 2.5
0.06 0.1
0.2 0.3 0.5
1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101 100°C
100
25°C
10-1 IC = ICES
10-2 REVERSE
FORWARD
10-3
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector CutOff Region
10 M
1.0 M
100 k
IC ICES
IC = 10 x ICES
VCE = 30 V
10 k
IC = 2 x ICES
1.0 k (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
0.1 k
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of BaseEmitter Resistance
www.onsemi.com
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