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Número de pieza | CGY184 | |
Descripción | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGY184 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! CGY 184
GaAs MMIC
Preliminary Data
l Power amplifier for PCN applications
l 2.5 W (34dBm) output power at 3.5 V
l Overall power added efficiency 43 %
l Fully integrated 4 stage amplifier
l Power ramp control
l Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 184
Marking
CGY 184
Ordering code
(taped)
Q62702G62
Package 1)
MW 16
Maximum ratings
Characteristics
Positive supply voltage
Supply current
Channel temperature
Storage temperature
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
Total power dissipation (Tc &
Tc: Temperature on case
Thermal Resistance
Characteristics
Junction-Case 2)
1) Dimensions see page 14
2) see also page 9
Symbol
VD
ID
TCh
Tstg
PPulse
Ptot
max. Value
9
4
150
-55...+150
tbd
8.5
Unit
V
A
°C
°C
W
W
Symbol
RthJC
max. Value
≤8.5
Unit
K/W
Siemens Aktiengesellschaft
Semiconductor Group
1
1
23.07.97
HL HF19P9E8-G11a-A0s1
1 page CGY 184
DC-ID(Vneg) characteristics – typical values of stage 3, VD=3V
2
High current
Medium current
Low current
1,8
1,6 ID
[A]
1,4
1,2
1
0,8
0,6
0,4
0,2
0
-5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0
Vneg [V]
DC-Output characteristics – typical values of stage 3
1,4
Vneg=-0.25
1,2
-0.50 V
Ptot=1.34 W
1
-0.75 V
0,8 -1.00 V
-1.25 V
0,6
-1.50 V
0,4 -1.75 V
-2.00 V
0,2
-2.25 V
0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 6,5
VD [V]
Pin 2( Vcon ) has to be open during measuring DC-characteristics
Siemens Aktiengesellschaft
Semiconductor Group
5
5
23.07.97
HL HF19P9E8-G11a-A0s1
5 Page CGY 184
Thermal Resistance and Temperature Considerations:
Because the MW16 heat sink is not easily accessible to a temperature measurment the
thermal resistance is defined as RthJC using the case temperature TC
l Calculation of Junction Temperature TJ :
TJ = TC + RthJC * Ptot
l Measurment of Case Temperature TC :
Tc should be measured in operation at the upper side of the case where the temperature
is highest. Small thermoelements ≤ 1mm (thin wires, thermopaste) and thermopapers
with low heat dissipation are well suited.
Thermoelement for Tcase
Case ( C )
Junction ( J )
PCB
soldered Heatsink
Ambient ( A )
Siemens Aktiengesellschaft
Semiconductor Group
11
11
23.07.97
HL HF19P9E8-G11a-A0s1
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet CGY184.PDF ] |
Número de pieza | Descripción | Fabricantes |
CGY180 | GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) | Siemens Semiconductor Group |
CGY181 | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) | Siemens Semiconductor Group |
CGY184 | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) | Siemens Semiconductor Group |
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