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PDF XP151A13A0MR Data sheet ( Hoja de datos )
| Número de pieza | XP151A13A0MR | |
| Descripción | Power MOS FET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.1Ω (max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
The XP151A13A0MR is a N-Channel Power MOS FET with low on
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V )
Rds (on) = 0.15Ω ( Vgs = 2.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 1.5V
High density mounting : SOT - 23
Pin Configuration
D
3
12
GS
SOT - 23 Top View
Equivalent Circuit
3
12
N - Channel MOS FET
( 1 device built-in )
Pin Assignment
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
+8
0.5
4
1
0.5
150
-55 to 150
( note ) : When implemented on a ceramic PCB
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XP151A13A0MR.PDF ] | |
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