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Número de pieza | TF3420 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Tuofeng Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TF3420 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF3420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The TF3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product TF3420 is Pb-free
Features
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
RDS(ON) < 42mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
Power Dissipation A TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
20
±12
6
25
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet TF3420.PDF ] |
Número de pieza | Descripción | Fabricantes |
TF3420 | N-Channel Enhancement Mode Field Effect Transistor | Tuofeng Semiconductor |
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