(PDF) AO3410 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	AO3410
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3410 AO3410 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V ID = 5.0 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM Power Dissipation A TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum 30 ±12 5.0 30 1.4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 65 85 43 Max 90 125 60 Units V V A W °C Units °C/W °C/W °C/W 1 page

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PDF AO3410 Data sheet ( Hoja de datos )