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PDF AO3400 Data sheet ( Hoja de datos )
| Número de pieza | AO3400 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3400
AO3400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400 is Pb-free
(meets ROHS & Sony 259 specifications). AO3400
is a Green Product ordering option. AO3400
is electrically identical.
Features
VDS (V) = 30V
ID = 4.8 A (VGS = 10V)
RDS(ON) < 40mΩ (VGS = 10V)
RDS(ON) < 42mΩ (VGS = 4.5V)
RDS(ON) < 55mΩ (VGS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
4.8
30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO3400.PDF ] | |
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