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PDF TF2315 Data sheet ( Hoja de datos )

Número de pieza TF2315
Descripción MOSFET ( Transistor )
Fabricantes Tuofeng Semiconductor 
Logotipo Tuofeng Semiconductor Logotipo



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No Preview Available ! TF2315 Hoja de datos, Descripción, Manual

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2315
G1
S2
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a Power MOSFET with the industry's smallest
footprint. This package, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
3D
Max.
-12
-4.3
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Parameter
RθJA
Maximum Junction-to-Ambientƒ
Typ.
75
Max.
100
Units
°C/W

1 page




TF2315 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2315
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
80 ID
TOP
-1.9A
-3.4A
BOTTOM -4.3A
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10

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