(PDF) TF2310 Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	TF2310
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device D Description SOT-23 G S The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. BVDSS RDS(ON) ID 60V 90mΩ 3A D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current3, VGS @ 4.5V IDM PD@TA=25℃ TSTG TJ Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 60 ±20 3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A W W/℃ ℃ ℃ Max. Value 90 Unit ℃/W 1 1 page

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PDF TF2310 Data sheet ( Hoja de datos )