(PDF) TF2309 Datasheet - P-Channel MOSFET

Número de pieza	TF2309
Descripción	P-Channel MOSFET
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2309 P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 0.340 at VGS = - 10 V 0.550 at VGS = - 4.5 V ID (A) - 1.25 -1 Pb-free Available RoHS* COMPLIANT (SOT-23) G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID Pulsed Drain Current Avalanche Current L = 0.1 mH IDM IAS Maximum Power Dissipationa, b TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 60 ± 20 - 1.25 -8 -5 1.25 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Leada Notes: a. Surface Mounted on FR4 Board. b. t ≤ 5 s. t≤5s Steady State Steady State Symbol RthJA RthJL * Pb containing terminations are not RoHS compliant, exemptions may apply. Typical 130 45 Maximum 100 166 60 Unit °C/W 1 1 page

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PDF TF2309 Data sheet ( Hoja de datos )