(PDF) TF2301A Datasheet - P-Channel MOSFET

Número de pieza	TF2301A
Descripción	P-Channel MOSFET
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301A P-Channel TF2301AMOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.080 @ VGS = - 4.5 V - 20 0.110 @ VGS = - 2.5 V ID (A) - 2.8 - 2.0 SOT-23/-3L G1 S2 3D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 "8 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS - 2.8 - 10 - 1.6 Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C PD TJ, Tstg 1.25 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. Symbol RthJA Limit 100 166 Unit V A W _C Unit _C/W 1 1 page

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PDF TF2301A Data sheet ( Hoja de datos )