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PDF 1481 Data sheet ( Hoja de datos )

Número de pieza 1481
Descripción P-Channel Enhancement Mode Power MOSFET
Fabricantes Tuofeng Semiconductor 
Logotipo Tuofeng Semiconductor Logotipo



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No Preview Available ! 1481 Hoja de datos, Descripción, Manual

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
1481
NCE P-Channel Enhancement Mode Power MOSFET
Description
The 1481 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications.
General Features
VDS = -12V,ID = -5.5A
RDS(ON) < 38m@ VGS=-2.5V
RDS(ON) < 26m@ VGS=-4.5V
D
G
S
Schematic diagram
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
Application
PWM applications
Load switch
Battery charge in cellular handset
Pin assignment
DFN2X2-6L bottom view
Package marking and ordering information
Device Marking
Device
Device Package
1481
1481
DFN2X2-6L
Reel Size
-
Tape Width
-
Quantity
-
Absolute maximum ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current -Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-12
±8
-5.5
-65
2.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Thermal Resistance,Junction-to-Case (Note 2)
RθJA
RθJC
50 /W
6.9 /W
Electrical characteristics (TA=25unless otherwise noted)
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1481 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
DFN2X2-6L Package Information
1481
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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