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PDF 9435 Data sheet ( Hoja de datos )
| Número de pieza | 9435 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 9435 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
9435
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V
RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO − 8
S SS
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
Rating
-30
±20
-4.6
-20
Unit
V
A
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
1
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
9435
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
1 TJ=150°C TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V -Source-to-Drain Voltage (V )
SD
80
70
60
50
40
30
20
10
0
0.01
Single Pulse Power
0.1 1
Time (sec)
10 30
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
0.01 0.1
Square Wave Pulse Duration (sec)
1
10 30
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 9435.PDF ] | |
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