|
|
PDF 4611 Data sheet ( Hoja de datos )
| Número de pieza | 4611 | |
| Descripción | 60V Dual P + N-Channel MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 4611 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4611
60V Dual P + N-Channel MOSFET
Product Summary
N-Channel
VDS (V) = 60V
ID = 6.3A (VGS=10V)
RDS(ON)
< 38mΩ (VGS=10V)
< 45mΩ (VGS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-60V
-4.9A
< 65mΩ (VGS = -10V)
< 78mΩ (VGS = -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2 D1
S2 D2
G2 D2
S1 D1
G1 D1 G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
6.3
Pulsed Drain Current B
IDM 40
Power Dissipation
TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
2
-55 to 150
Max p-channel
-60
±20
-4.9
-30
2
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
4611
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
Conditions
ID=-250µA, VGS=0V
Min Typ Max Units
-60 V
IDSS Zero Gate Voltage Drain Current
VDS=-48V, VGS=0V
-1 µA
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
±100 nA
-1.5 -1.9 -3
V
-30 A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-4.9A
VGS=-4.5V, ID=-4.4A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=-5V, ID=-4.9A
IS=-1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=-30V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-30V, ID=-4.9A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=6.2Ω,
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4.9A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs
55
68
17.8
-0.73
65
78
-1
-3
mΩ
mΩ
S
V
A
2417
179
120
1.9
2900
2.3
pF
pF
pF
Ω
45.2 55
22.8 28
5.8
9.6
9.8
6.1
44
12.7
32 42
42
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any aggivievennaappplicliacatiotionnddeeppeennddssoonnththeeuuseser'sr'sspspeecicficficbbooaardrdddeesisgignn. .TThheecucurrrerennt traratintinggisisbbaaseseddoonnththeet t ≤≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8<030µ0sµpsulpsuels,edsu, tdyuctyycclyec0le.50%.5%mamx.ax.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev5: Nov. 2010
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4611.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 4611 | 60V Dual P + N-Channel MOSFET | Tuofeng Semiconductor |
| 4612 | MOSFET ( Transistor ) | Tuofeng Semiconductor |
| 4616 | MOSFET ( Transistor ) | Tuofeng Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |