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PDF RF9812 Data sheet ( Hoja de datos )
| Número de pieza | RF9812 | |
| Descripción | QUAD-BAND GPRS/LINEAR EDGE +3.2V TD-SCDMA MULTI-MODE TRANSMIT MODULE | |
| Fabricantes | RFMD | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RF9812 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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RF9812QUAD-
BAND 3.2V
MULTI-MODE
TRANSMIT
MODULE
RF9812
QUAD-BAND GPRS/LINEAR EDGE +3.2V
TD-SCDMA MULTI-MODE TRANSMIT MODULE
Package: 22-pin Module, 6.63mm x 5.24mm x 1.00mm
GND 1
22
21
20 19
18 17
Features
TD-SCDMA Compliant
B34/39
TD-HSDPA and TD-HSPA+
Compliant
+25 dBm Output Power TD-
SCDMA
Low Gain Mode for reduced
ICQ
High Efficiency at Rated POUT
• VBATT=3.5V
• GSM850/EGSM900=41/40%
• DCS1800/PCS1900=38/36%
Integrated Power Flattening
Circuit for Lower Power Varia-
tion Under Mismatch Condi-
tions
Integrated VBATT Tracking Cir-
cuit for improved Switching
Spectrum under low VBATT
Conditions
Symmetrical RX Ports
Robust 8kV ESD Protection at
Antenna Port
Pin Compatible with RF9810
Applications
3.2V Quad-Band
GSM/GPRS/EDGE and Dual-
Band TD-SCDMA Handsets
Mobile GPRS/EDGE/
TD-SCDMA Data Products
GPRS Class 12 Compliant
Products
RFIN HB 2
GND 3
RFIN LB 4
GND 5
GND 6
Amplifier
CMOS Controller
16 RX4
Switch
ESD
Protection
15 ANTENNA
14 TD_EN
13 GPCTRL3
78
9 10
11 12
Functional Block Diagram
Product Description
The RF9812 is a Quad Band EDGE+TD-SCDMA Multi-Mode Transmit Module with the capability
to support both GSM/GPRS/Linear EDGE (GSM850/EGSM900/DCS1800/PCS1900) and
TDSCDMA (1880MHz to 1920MHz and 2010MHz to 2025MHz) B34/39 frequency bands. The
RF9812 continues to build upon RFMD’s leading patented PowerStar® Architecture to include
such features as a Power Flattening Circuit, VRAMP Filtering, VBATT Tracking, EDGE Low Power
Mode. RFMD has integrated TD-SCDMA functionality into the RF9812, so it can be used as the
transmit module in 3.2V, 50 GSM/EDGE/TD-SCDMA dual-mode cellular equipment.
The RF9812 module includes a multi-function CMOS controller, GaAs HBT power amplifier, and
pHEMT front end antenna switch. The amplifier devices are manufactured on RFMD’s Advance
Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) Process, which is designed to
operate either in saturated mode for GMSK or linear mode for EDGE 8PSK and TD-SCDMA sig-
naling. The highly integrated EDGE+TD-SCDMA transmit module simplifies GSM/TD-SCDMA
dual-mode handset and data card design by eliminating the need for complicated control loop
design, output RF spectrum (ORFS) optimization, harmonic filtering, and component matching,
all of which combine to provide best in class RF performance, solution size, and ease of imple-
mentation for GSM/EDGE/TD-SCDMA dual-mode cellular phone and data card systems. The RF
ports are 50 matched and the antenna port includes ESD protection circuitry which meets the
stringent 8kV industry standards requiring no additional components. All of these eliminated
factors help to improve the customer’s product time to market.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
GaAs pHEMT
Si CMOS
GaN HEMT
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
DS120910
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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| PDF Descargar | [ Datasheet RF9812.PDF ] | |
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