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PDF KTC3265 Data sheet ( Hoja de datos )
| Número de pieza | KTC3265 | |
| Descripción | NPN Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
KTC3265 TRANSISTOR (NPN)
SOT-23
FEATURES
z High DC current gain
z Complementary to KTA1298
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Marking
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
V BE
fT
Cob
Test conditions
IC= 100μA, IE=0
IC= 10mA, IB=0
IE=100μA, IC=0
VCB=30 V, IE=0
VEB=5 V, IC=0
VCE=1V, IC= 100mA
IC=500mA, IB=20mA
VCE=1V,IC=10mA
VCE=5V, IC=10mA
f=100MHz
VCB=10V,IE=0,f=1MHZ
O
100-200
EO
MIN TYP
35
30
5
100
0.5
120
13
Y
160-320
EY
MAX
0.1
0.1
320
0.5
0.8
UNIT
V
V
V
μA
μA
V
V
MHz
pF
1 page | ||
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| PDF Descargar | [ Datasheet KTC3265.PDF ] | |
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